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SIMOPAC(R) Module
BSM 244 F
VDS = 400 V ID = 2 x 45 A R DS(on) = 0.1
q q q q q q q
Power module Half-bridge FREDFET N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 2a
Type BSM 244 F Maximum Ratings Parameter Drain-source voltage
Ordering Code C67076-A1155-A2
Symbol
Values 400 400 20 45 180 - 55 ... + 150 400 0.31 2500 16 11 F 55/150/56
Unit V
VDS VDGR VGS ID ID puls Tj, Tstg Ptot Rth JC Vis
- - - -
Drain-gate voltage, RGS = 20 k Gate-source voltage Continuous drain current, TC = 25 C Pulsed drain current, TC = 25 C Operating and storage temperature range Power dissipation, TC = 25 C Thermal resistance Chip-case Insulation test voltage2), t = 1 min. Creepage distance, drain-source Clearance, drain-source DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
1) 2)
A C W K/W Vac mm -
See chapter Package Outline and Circuit Diagrams. Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1.
Semiconductor Group
106
BSM 244 F
Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VDS = 400 V, VGS = 0 Tj = 25 C Tj = 125 C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-state resistance VGS = 10 V, ID = 28 A Dynamic Characteristics Forward transconductance VDS 2 x ID x RDS(on)max., ID = 28 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Turn-on time ton (ton = td (on) + tr) VCC = 200 V, VGS = 10 V ID = 28 A, RGS = 3.3 Turn-off time toff (toff = td (off) + tf) VCC = 200 V, VGS = 10 V ID = 28 A, RGS = 3.3 Values typ. max. Unit
V(BR)DSS
400 - 3.0 - 4.0
V
VGS(th)
2.1
I DSS
- - 50 300 10 0.09 250 1000
A
IGSS
- 100
nA - 0.1
RDS(on)
gfs Ciss Coss Crss td (on) tr td (off) tf
- - - - - - - -
26 18 1.3 0.48 60 30 130 40
- 24 1.9 0.7 - - - -
S nF
ns
Semiconductor Group
107
BSM 244 F
Electrical Characteristics (cont'd) at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Fast-recovery reverse diode Continuous reverse drain current TC = 25 C Pulsed reverse drain current TC = 25 C Diode forward on-voltage IF = 90 A , VGS = 0 Reverse recovery time IF = IS, diF/dt = 100 A/ s, VR = 100 V Reverse recovery charge IF = IS, diF/dt = 100 A/ s, VR = 100 V Values typ. max. Unit
IS
- - - 1.2 200 1.5 45 180
A
ISM
-
VSD
- 1.6
V ns - - C - -
trr Qrr
Semiconductor Group
108
BSM 244 F
Characteristics at Tj = 25 C, unless otherwise specified. Power dissipation Ptot = f (TC) parameter: Tj = 150 C Typ. output characteristics ID = f (VDS) parameter: tp = 80 s
Safe operating area ID = f (VDS) parameter: single pulse, TC = 25 C Tj 150 C
Typ. transfer characteristic ID = f (VGS) parameter: tp = 80 s , VDS = 25 V
Semiconductor Group
109
BSM 244 F
Typ. on-state resistance RDS(on) = f (ID) parameter: VGS
On-state resistance RDS(on) = f (Tj) parameter: ID = 28 A; VGS = 10 V (spread)
Gate threshold voltage VGS(th) = f (Tj) parameter: VDS = VGS, ID = 1 mA (spread)
Drain current ID = f (TC) parameter: VGS 10 V, Tj = 150 C
Semiconductor Group
110
BSM 244 F
Drain-source breakdown voltage V(BR)DSS (Tj) = b x V(BR)DSS (25 C)
Typ. capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz (spread)
Typ. reverse recovery charge Qrr = f (Tj) parameter: diF/dt = 100 A/s, IF = 45 A VR = 100 V
Semiconductor Group
111
BSM 244 F
Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T
Typ. gate charge VGS = f (QGate) parameter: IDpuls = 67.5 A
Semiconductor Group
112

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